• DocumentCode
    3210069
  • Title

    High isolation 10HHz to 20 GHz SPDT switch design using novel octagonal pin diode structure

  • Author

    Sun, Pinping ; Wang, Le ; Upadhyaya, Parag ; Heo, Deukhyoun

  • Author_Institution
    Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA
  • fYear
    2005
  • fDate
    15-15 April 2005
  • Firstpage
    38
  • Lastpage
    41
  • Abstract
    This paper presents a high isolation SPDT switch design based on new octagonal PIN diode structure in IBM7HP SiGe process. The series-shunt-shunt 6.25mum2-50mum2-50mum2 PIN diode combination is used in SPDT switch design to get high isolation for a phase array application. The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency bands
  • Keywords
    Ge-Si alloys; microwave switches; p-i-n diodes; 0.64 dB; 10 to 20 GHz; IBM7HP process; SiGe; high isolation SPDT switch design; octagonal PIN diode structure; series-shunt-shunt PIN diode combination; Contact resistance; Diodes; Equations; Frequency; Germanium silicon alloys; Insertion loss; MMICs; Phased arrays; Silicon germanium; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
  • Conference_Location
    Boise, ID
  • Print_ISBN
    0-7803-9072-5
  • Type

    conf

  • DOI
    10.1109/WMED.2005.1431612
  • Filename
    1431612
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210069