DocumentCode :
3210069
Title :
High isolation 10HHz to 20 GHz SPDT switch design using novel octagonal pin diode structure
Author :
Sun, Pinping ; Wang, Le ; Upadhyaya, Parag ; Heo, Deukhyoun
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA
fYear :
2005
fDate :
15-15 April 2005
Firstpage :
38
Lastpage :
41
Abstract :
This paper presents a high isolation SPDT switch design based on new octagonal PIN diode structure in IBM7HP SiGe process. The series-shunt-shunt 6.25mum2-50mum2-50mum2 PIN diode combination is used in SPDT switch design to get high isolation for a phase array application. The switch achieves minimum isolation of 45 dB and maximum insertion loss of 0.64 dB over 10 GHz to 20 GHz covering X and Ku frequency bands
Keywords :
Ge-Si alloys; microwave switches; p-i-n diodes; 0.64 dB; 10 to 20 GHz; IBM7HP process; SiGe; high isolation SPDT switch design; octagonal PIN diode structure; series-shunt-shunt PIN diode combination; Contact resistance; Diodes; Equations; Frequency; Germanium silicon alloys; Insertion loss; MMICs; Phased arrays; Silicon germanium; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
0-7803-9072-5
Type :
conf
DOI :
10.1109/WMED.2005.1431612
Filename :
1431612
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3210069
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