Title :
Atomic-scale electrical characterization of carbon nanotubes on silicon surfaces with the UHV-STM
Author :
Albrecht, Peter M ; Lyding, Joseph W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana-Champaign, Urbana, IL
Abstract :
The ultrahigh vacuum scanning tunneling microscope (UHV-STM) is used to investigate the electrical and structural properties of single-walled carbon nanotubes (SWNTs) supported on both clean and hydrogen-terminated Si(100) surfaces. Dry contact transfer (DCT) of SWNTs in situ precludes contamination of the SWNT/Si interface and enables sensitive atomic-scale measurements. Tunneling current-voltage (I-V) and conductance-voltage (dI/dV-V) spectra have been acquired from both semiconducting and metallic SWNTs. The compatibility of SWNTs with STM nanofabrication on the Si(100)-2times1:H surface is exemplified by the integration of H-resist nanolithography with adsorbed SWNTs. Contrary to earlier UHV-STM studies of SWNTs on Au(111), the motivation for our work is derived from the technological importance of the Si(100) substrate and the development of hybrid SWNT-Si nanoelectronic devices
Keywords :
carbon nanotubes; nanolithography; scanning tunnelling microscopy; silicon; substrates; surface contamination; STM nanofabrication; UHV-STM; atomic-scale electrical characterization; atomic-scale measurements; conductance-voltage spectra; dry contact transfer; hybrid SWNT-Si nanoelectronic devices; nanolithography; silicon surfaces; single-walled carbon nanotubes; structural properties; tunneling current-voltage; ultrahigh vacuum scanning tunneling microscope; Atomic measurements; Carbon nanotubes; Contacts; Discrete cosine transforms; Microscopy; Pollution measurement; Silicon; Surface cleaning; Surface contamination; Tunneling;
Conference_Titel :
Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
0-7803-9072-5
DOI :
10.1109/WMED.2005.1431615
