Modelling of Thin Film Transistors for Circuit Simulation

Author

Iñiguez, B. ; Picos, R. ; Estrada, M. ; Cerdeira, A. ; Ytterdal, T.A. ; Jackson, W. ; Koudymov, A. ; Veksler, D. ; Shur, M.S.

Author_Institution

Univ. Rovira i Virgili, Tarragona

fYear

2007

fDate

21-23 June 2007

Firstpage

35

Lastpage

40

Abstract

We review recent physics-based, compact models for thin film transistors (TFTs), including amorphous (a-Si), polysilicon (poly-Si), nanocrystalline silicon (nc-Si), and organic TFTs. The models accurately reproduce the DC characteristics for different geometries. We also present a universal TFT model paradigm, which allows to obtain a suitable estimation of TFT characteristics using only eight parameters, which are very easy to extract. This universal TFT model is used for the first iteration step in complete models adapted to each type of device.

Keywords

amorphous semiconductors; circuit simulation; semiconductor device models; silicon; thin film transistors; TFT model paradigm; amorphous; circuit simulation; nanocrystalline silicon; organic TFT; polysilicon; thin film transistors; Active matrix liquid crystal displays; Amorphous materials; Circuit simulation; Crystalline materials; Crystallization; Parameter extraction; Radiofrequency identification; Silicon; Temperature; Thin film transistors; Compact modelling; Organic devices; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on

Conference_Location

Ciechocinek

Print_ISBN

83-922632-9-4

Electronic_ISBN

83-922632-9-4

Type

conf

DOI

10.1109/MIXDES.2007.4286117

Filename

4286117