Improvement of emission efficiency of nanocrystalline silicon planar cathodes

Author

Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori ; Murakami, Katsuhisa ; Wakaya, Fujio ; Takai, Mikio

Author_Institution

Hachinohe Inst. of Technol., Hachinohe

fYear

2007

fDate

8-12 July 2007

Firstpage

106

Lastpage

107

Abstract

In this paper, in order to improve the emission efficiency and understand the emission mechanism MOS cathodes are fabricated based on nanocrystalline Si (nc-Si) prepared by a pulsed laser ablation (PLA) technique and investigated their emission properties. The cathode is composed of nc-Si covered with a thin oxide film sandwiched between an n-type silicon substrate as an electron source and a thin top electrode. The emission area of the cathode was designed 500 mum in diameter. The emission characteristics of the nc-Si MOS cathode were measured in a vacuum of 10^-5 pa.

Keywords

MIS structures; cathodes; elemental semiconductors; fluorescence; nanostructured materials; nanotechnology; photoluminescence; pulsed laser deposition; silicon; MOS cathode; Si; emission efficiency; nanocrystalline silicon planar cathodes; pulsed laser ablation technique; silicon substrate; size 500 mum; Cathodes; Electrodes; Electron sources; Laser ablation; Mechanical factors; Optical pulses; Programmable logic arrays; Semiconductor films; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Conference_Location

Chicago, IL

Print_ISBN

978-1-4244-1133-7

Electronic_ISBN

978-1-4244-1134-4

Type

conf

DOI

10.1109/IVNC.2007.4480953

Filename

4480953