Electrical Characteristics in N- and P-MOSFETS with Slightly Tilted Off-Axis (110) Channel

Author

Momose, H.S. ; Yoshitomi, S. ; Kojima, K. ; Ohguro, T. ; Toyoshima, Y. ; Ishiuchi, H.

fYear

2007

fDate

21-23 June 2007

Firstpage

80

Lastpage

83

Abstract

Si surface properties and electrical characteristics in n- and p-MOSFETs with 2-6 degree tilted off-axis (110) channel were investigated for the first time. The transconductance of p-MOSFET with off-axis channel was significantly degraded than that of normal channel on (110) plane, whereas that of n-MOSFET was slightly improved than that of normal channel. The changes were larger than those observed in slightly off-axis (100) samples. It was also found that the gate leakage current and 1/f noise in (110) samples were sensitive to off-axis angle.

Keywords

MOSFET; leakage currents; electrical characteristics; gate leakage current; n-MOSFET; off-axis angle; p-MOSFET; slightly tilted off-axis channel; transconductance; Atomic force microscopy; Degradation; Electric variables; Leakage current; MOSFET circuits; Microprocessors; Rough surfaces; Silicon; Surface roughness; Transconductance; 1/f noise; Gate leakage current; Mobility; Off-axis; Silicon; Surface orientation; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on

Conference_Location

Ciechocinek

Print_ISBN

83-922632-9-4

Electronic_ISBN

83-922632-9-4

Type

conf

DOI

10.1109/MIXDES.2007.4286124

Filename

4286124