Enhancing power supply rejection of low-voltage low-dropout voltage regulators using bulk driven PMOS

Author

Izadpanahi, Nazanin ; Maymandi-Nejad, Mohammad

Author_Institution

Dept. of Electr. Eng., Ferdowsi Univ. of Mashhad, Mashhad, Iran

fYear

2012

fDate

15-17 May 2012

Firstpage

150

Lastpage

153

Abstract

In this paper a low-voltage low-dropout (LDO) regulator is presented in which the power supply rejection (PSR) is increased by properly driving the bulk of the PMOS pass transistor. A signal proportional to the supply noise is injected to the bulk of the PMOS transistor so that the impact of supply noise on the output voltage coming from other paths is cancelled. Using this technique the PSR of the regulator is increased by approximately 20 dB over a wide frequency range. The supply voltage of the prototype regulator is 1.2 V and the output voltage is 1V. It is designed in 0.18μm CMOS technology and provides a current of 50 mA to the load.

Keywords

CMOS integrated circuits; MOSFET; power supply circuits; voltage regulators; CMOS technology; LDO regulator; PSR; bulk driven PMOS pass transistor; current 50 mA; low-voltage low-dropout voltage regulators; power supply rejection; size 0.18 mum; supply noise; voltage 1 V; voltage 1.2 V; CMOS integrated circuits; Switches; LDO; Pass Transistor; Supply Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2012 20th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4673-1149-6

Type

conf

DOI

10.1109/IranianCEE.2012.6292342

Filename

6292342