Title :
Electronic features of rippled graphene
Author :
Nasiri, Saeed Haji ; Moravvej-Farshi, Mohammad Kazem ; Faez, Rahim ; Bajelan, Aghil
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Qazvin, Iran
Abstract :
Using tight binding theory the effect of topological ripples on the electronic band structure, density of states (DOS), and Fermi velocity of graphene are studied. The results show that by an increase in the ripple height the graphene Fermi velocity decreases and its DOS increases.- Moreover, we show that an increase in the ripple period causes the graphene band gap and DOS to decrease and its Fermi velocity to increase.
Keywords :
band structure; binding energy; graphene; C; DOS; binding theory; density of states; electronic band structure; graphene Fermi velocity; graphene band gap; rippled graphene; topological ripple effect; Density of states; Electronic band structure; Fermi velocity; Graphene; Topological ripples;
Conference_Titel :
Electrical Engineering (ICEE), 2012 20th Iranian Conference on
Conference_Location :
Tehran
Print_ISBN :
978-1-4673-1149-6
DOI :
10.1109/IranianCEE.2012.6292346
