Title :
Long term transients in MOSFET 1/f noise under switched bias conditions
Author :
Louie, Michael Y. ; Forbes, Leonard
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR
Abstract :
Klumperink et al., have recently had a number of publications on the low frequency noise of MOSFET´s under switched gate bias conditions. Since this is an important consideration in the low frequency noise in analog circuits with switching we have previously investigated the signal processing techniques used in the frequency domain. Here we investigate the time dependence of switched bias 1/f noise
Keywords :
1/f noise; MOSFET; semiconductor device noise; MOSFET; analog circuits; frequency domain; low frequency noise; signal processing; switched bias 1/f noise; switched gate bias condition; Circuit noise; Circuit simulation; Computer science; Low-frequency noise; MOSFET circuits; Phase modulation; Phase noise; Radio frequency; Switching circuits; Threshold voltage;
Conference_Titel :
Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
0-7803-9072-5
DOI :
10.1109/WMED.2005.1431632
