A 15-GHz single-pole double-throw annular MOSFET switch for space application

Author

Wang, Le ; Sun, Pinping ; Rajashekharaiah, Mallesh ; Heo, Deuk ; Champion, Corbin L. ; Lame, G.S.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA

fYear

2005

fDate

15-15 April 2005

Firstpage

103

Lastpage

106

Abstract

A high isolation 15-GHz radiation tolerant SPDT (single-pole double-throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved total dose radiation tolerance in CMOS circuits. The designed switch achieves 40.5-dB isolation at 15-GHz

Keywords

BiCMOS integrated circuits; Ge-Si alloys; equivalent circuits; field effect transistor switches; microwave switches; 15 GHz; BiCMOS process; CMOS circuits; Schwartz-Christoffel transformation; SiGe; conformal mapping; equivalent circuit model; octagonal annular MOSFET; parasitic capacitance extraction method; radiation tolerant SPDT; single-pole double-throw annular MOSFET switch; space application; Application software; BiCMOS integrated circuits; Conformal mapping; Geometry; Germanium silicon alloys; Ionizing radiation; MOSFET circuits; Parasitic capacitance; Silicon germanium; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on

Conference_Location

Boise, ID

Print_ISBN

0-7803-9072-5

Type

conf

DOI

10.1109/WMED.2005.1431633

Filename

1431633