Room and Low temperature photoluminescence properties of CdSe quantum dots synthesized rapidly in aqueous approach

Author

An, Wenyu ; Yi, Lie ; Liu, Chunxia ; Wenyu An ; Zhang, Yanhua

Author_Institution

Center for Coll. Phys. Exp., Heilongjiang Univ., Harbin, China

Volume

2

fYear

2011

fDate

29-31 July 2011

Abstract

Thiol-capped CdSe quantum dots are synthesized rapidly in aqueous solution assisted by microwave irradiation without any poisonous materials. Room and low temperature photoluminescence is employed to investigate the excitonic emission from thiol-capped CdSe quantum dots between 83K and 293 K. The photoluminescence peak position of CdSe quantum dots shift to shorter wavelengths and the photoluminescence intensity first enhance and then quench with decrease of temperature. The temperature dependence of the PL spectra is demonstrated through thermal escape and thermal rectification of surface trap states.

Keywords

II-VI semiconductors; cadmium compounds; excitons; photoluminescence; quenching (thermal); semiconductor quantum dots; CdSe; aqueous approach; aqueous solution; excitonic emission; low temperature photoluminescence; microwave irradiation; photoluminescence intensity; quenching; room temperature photoluminescence; surface trap states; temperature 83 K to 298 K; thermal escape; thermal rectification; thiol-capped quantum dots; Films; Microwave measurements; Quantum dots; Quantum mechanics; Tellurium; Temperature measurement; Xenon; CdSe; Low temperature; Photoluminescence; Quantum dots;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics and Optoelectronics (ICEOE), 2011 International Conference on

Conference_Location

Dalian

Print_ISBN

978-1-61284-275-2

Type

conf

DOI

10.1109/ICEOE.2011.6013212

Filename

6013212