Title :
Broad energy distribution of NBTI-induced interface states in p-MOSFETs with ultra-thin nitrided oxide
Author :
Stathis, J.H. ; LaRosa, G. ; Chou, A.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Yorktown Heights, NY, USA
Abstract :
The energy distribution of interface states during NBTI stress of ultra-thin nitrided-oxide p-FETs is studied using a combination of LV-SILC and DCIV measurements. LV-SILC is sensitive to states near the conduction band edge:, while DCIV is sensitive to states near mid-gap. The results show that die interface states associated with NBTI in nitrided oxides have a very broad energy distribution, Compared to pure SiO2, the interface state density in nitrided oxide is higher in the upper half of the Si band gap. In addition, generated bulk neutral traps show a poor agreement with the NBTI-induced threshold voltage shift.
Keywords :
MOSFET; dangling bonds; energy gap; interface states; NBTI-induced interface states; SiO2; broad energy distribution; bulk neutral traps; conduction band edge; negative-bias-temperature instability; p-MOSFETs; pure SiO2; states near mid-gap; ultra-thin nitrided oxide; Energy measurement; Interface states; MOSFET circuits; Niobium compounds; Nitrogen; Plasma measurements; Research and development; Stress; Threshold voltage; Titanium compounds;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315292
