• DocumentCode
    3210622
  • Title

    Field emission properties of ZnO nanowire array directly grown from zinc substrate

  • Author

    Cai, L.H. ; Chen, J. ; Zhang, S.M. ; Deng, S.Z. ; She, J.C. ; Xu, N.S.

  • Author_Institution
    Sun Yat-sen (Zhongshan) Univ., Guangzhou
  • fYear
    2007
  • fDate
    8-12 July 2007
  • Firstpage
    137
  • Lastpage
    138
  • Abstract
    ZnO nanowires were grown by direct oxidation of ZnO substrate. The field emission from ZnO nanowire has been studied. The obtained results indicated that the ZnO nanowire has good field emission properties.
  • Keywords
    II-VI semiconductors; field emission; nanowires; semiconductor growth; wide band gap semiconductors; zinc compounds; ZnO; ZnO nanowires growth; direct oxidation; field emission properties; zinc substrate; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
  • Conference_Location
    Chicago, IL
  • Print_ISBN
    978-1-4244-1133-7
  • Electronic_ISBN
    978-1-4244-1134-4
  • Type

    conf

  • DOI
    10.1109/IVNC.2007.4480967
  • Filename
    4480967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210622