DocumentCode :
3210640
Title :
Hot carrier degradation in novel strained-Si nMOSFETs
Author :
Lu, M.F. ; Chiang, Sinclair ; Liu, Alex ; Huang-Lu, S. ; Yeh, M.-S. ; Hwang, J.R. ; Tang, T.H. ; Shiau, W.T. ; Chen, M.C. ; Wang, Tahui
Author_Institution :
Central Res. & Dev. Div., UMC, Hsin-Chu, Taiwan
fYear :
2004
fDate :
25-29 April 2004
Firstpage :
18
Lastpage :
22
Abstract :
High Id-sat enhancement is benefited from novel strained-Si process. However, it might cause reliability problems. Here we revealed the HCI degradation of strained-Si devices, which also can be correlated to Ib/Id, were worse than conventional bulk Si devices. Besides, it had high positive temperature coefficient in low voltages. Thus, it would be even worse at the operation voltage.
Keywords :
MOSFET; hot carriers; impact ionisation; semiconductor device breakdown; semiconductor device reliability; Si; hot carrier degradation; novel strained-Si nMOSFETs; operation voltage; reliability problems; Degradation; Electrons; Germanium silicon alloys; Hot carriers; Impact ionization; MOSFETs; Photonic band gap; Silicon germanium; Temperature measurement; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
Type :
conf
DOI :
10.1109/RELPHY.2004.1315295
Filename :
1315295
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3210640
بازگشت