Direct simulation monte carlo modeling of ionized metal physical vapor deposition for semiconductor processing

In this paper, we discuss results from direct simulation Monte Carlo (DSMC) modeling of hollow cathode magnetron (HCMs) for deposition of Cu. DSMC provides the possibility of an exact solution of Boltzmann´s gas dynamic equation, and so should be applicable to lower pressures than conventional computational techniques. To obtain plasma source functions, electric potentials and magnetic fields, the DSMC model has been coupled to the hybrid plasma equipment model (HPEM). The coupling at this stage is achieved by using the quasi-converged flow fields from the HPEM as initial conditions for the DSMC calculations. These conditions include the number density, velocity and temperature as well as the source functions to generate or eliminate particles locally. Assuming quasi-neutrality, electron motion and electron-heavy particle chemical reactions and relaxation are then modeled in the DSMC. Comparison of continuum centric and kinetic centric simulations will be made for HCMs and inductively coupled plasmas, and validated using experimental data.