Title :
Electron emission properties of silicon field emitter arrays in gaseous ambient for charge compensation device
Author :
Takeuchi, M. ; Kojima, T. ; Oowada, A. ; Gotoh, Y. ; Nagao, M. ; Tsuji, H. ; Ishikawa, J. ; Sakai, S. ; Kimoto, T.
Author_Institution :
Japan Sci. & Technol. Agency, Kyoto
Abstract :
Field emitter arrays made of silicon (Si-FEAs) is a possible candidate for the space charge compensation device during ion implantation process for semiconductor devices, because they are free from metal contamination and have less out-gas. When operating in the ion implanter, Si-FEAs suffer from the pressure increase due to out-gassing from resist materials on a silicon wafer. We examined electron emission properties of the Si-FEAs in H2, CH4, CO, O2, or CO2 ambient, which are gases resulting from ion implantation to photoresist. In the work of Gotoh et al. (2006), Si-FEAs treated by CHF3 plasma (Si:C-FEA) were also examined. As a result, it was found that O2 ambient shortened the lifetime of the Si-FEA, but not for the lifetime of the Si:C-FEA. On the other hand, reductive ambient produced good properties of electron emission. In this study, we examined the lifetime of the Si-FEA and the Si:C-FEA in O2 ambient again to reproduce the previous result, and also the lifetime in C2H4 which is also one of the major gases in the implantation ambient.
Keywords :
charge compensation; electron field emission; field emitter arrays; ion implantation; photoresists; silicon; Si:C; charge compensation device; gaseous ambient; ion implantation process; photoresists; silicon field emitter array electron emission; Contamination; Electron emission; Field emitter arrays; Gases; Ion implantation; Resists; Semiconductor devices; Semiconductor materials; Silicon; Space charge;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4480971