• DocumentCode
    3210788
  • Title

    Investigation of optimum junction depth of InSb Infrared Photodiode

  • Author

    Asad, M. ; Ghorbanzadeh, M. ; Sareminia, Gh ; Fathipour, M.

  • Author_Institution
    Nanotechnol. Res. Center, Shiraz Univ., Shiraz, Iran
  • fYear
    2012
  • fDate
    15-17 May 2012
  • Firstpage
    260
  • Lastpage
    262
  • Abstract
    Junction depth plays an important role in determining reverse saturation current (Is) and the quantum efficiency η of a detector. In order to reduce the Is and increase the η, the thickness of p-type region is made as thin as possible. To evaluate the effect of junction depth on quantum efficiency and reverse saturation current we calculated the efficiency and fabricate InSb PV detector, and the effect of junction depth on performance of this type of detector acquired.
  • Keywords
    indium compounds; infrared detectors; photodetectors; photodiodes; InSb; PV detector; infrared photodiode; optimum junction depth; p-type region thickness; quantum efficiency; reverse saturation current; Pollution measurement; Presses; Diffusion; InSb PV detector; Junction depth; Reverse saturation current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering (ICEE), 2012 20th Iranian Conference on
  • Conference_Location
    Tehran
  • Print_ISBN
    978-1-4673-1149-6
  • Type

    conf

  • DOI
    10.1109/IranianCEE.2012.6292364
  • Filename
    6292364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3210788