Simulations of high-power pulsed terahertz sources using laser-assisted field emission

Author

Hagmann, Mark J.

Author_Institution

CTO NewPath Res. L.L.C., Salt Lake City

fYear

2007

fDate

8-12 July 2007

Firstpage

165

Lastpage

166

Abstract

We are studying ultrafast optoelectronics in a new medium the clean surface of a nanoscale tip of a polyvalent refractory metal in vacuum during field emission. Field emission of electrons responds to changes in the potential in less than 2 fs, so the speed is only limited by the means that are used to couple to these pulses in the current. Extremely high current densities occur in field emission, up to 10⁹ A/m² in steady-state, or 10¹² A/ m² with pulsed operation, so that nanoscale sources could have a high energy output. This calculation is supported by measurements of laser-assisted field emission with femtosecond lasers.

Keywords

current density; field emission; high-speed optical techniques; laser beam applications; photoemission; refractories; clean nanoscale tip surface; current densities; femtosecond lasers; high-power pulsed terahertz source simulation; laser-assisted field emission; nanoscale sources; polyvalent refractory metal nanoscale tip; ultrafast optoelectronics; vacuum condition; Current density; Nonlinear optics; Optical imaging; Optical pulses; Optical refraction; Power lasers; Quantum cascade lasers; Spectroscopy; Stress; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Conference_Location

Chicago, IL

Print_ISBN

978-1-4244-1133-7

Electronic_ISBN

978-1-4244-1134-4

Type

conf

DOI

10.1109/IVNC.2007.4480980

Filename

4480980