DocumentCode
3210874
Title
Comparison of Two Pole-Zero Cancellation Circuits for Fast Charge Sensitive Amplifier in CMOS Technology
Author
Grybos, P. ; Maj, P. ; Szczygie, R.
Author_Institution
AGH Univ. of Sci. & Technol., Krakow
fYear
2007
fDate
21-23 June 2007
Firstpage
243
Lastpage
246
Abstract
The problem of charge sensitive amplifier and pole-zero cancellation circuit designed in CMOS technology for high rates of input pulses is considered. The continuously sensitive charge amplifier uses a MOS transistor biased in triode region to discharge the integration capacitance. Low noise requirements of the front-end electronics place the feedback CSA resistance in hundreds of the megaohm range. However the high counting rate of input pulses generates a DC voltage shift at the CSA output which could degrade the circuit performance. We analyze two circuit architectures for biasing transistors in feedback of CSA and PZC circuit taking into account the pile-up effects in the signal processing chain.
Keywords
CMOS integrated circuits; MOSFET; poles and zeros; CMOS technology; DC voltage shift; HSPICE analysis; MOS transistor; biasing transistors; circuit architecture; fast charge sensitive amplifier; feedback amplifier resistance; front-end electronics; integration capacitance; pole-zero cancellation circuits; readout electronics; signal processing; CMOS technology; Capacitance; Circuit noise; DC generators; Feedback circuits; MOSFETs; Noise cancellation; Pulse amplifiers; Pulse circuits; Pulse generation; Charge sensitive amplifier; Pole-zero cancellation circuit;
fLanguage
English
Publisher
ieee
Conference_Titel
Mixed Design of Integrated Circuits and Systems, 2007. MIXDES '07. 14th International Conference on
Conference_Location
Ciechocinek
Print_ISBN
83-922632-9-4
Electronic_ISBN
83-922632-9-4
Type
conf
DOI
10.1109/MIXDES.2007.4286158
Filename
4286158
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