Title :
Improved field emission properties from poly-crystalline indium oxide coated single walled carbon nanotubes
Author :
Lee, Jungwoo ; Lee, Wonjoo ; Sim, Kijo ; Yi, Whikun
Author_Institution :
Hanyang Univ., Seoul
Abstract :
Wide-band-gap semiconductors such as indium, tin, molybdenum, and chromium oxides have stimulated considerable attention in recent years as promising cold-cathode materials due to their remarkable physical and chemical stability during the cold electron emission process. Especially, indium oxide (direct band gap : 3.6 eV) can be one of the most attractive conductive oxides for field emission because of its relatively low electron affinity (3.5 eV), high chemical inertness and sputter resistance. We synthesized nano-composite of single-walled carbon nanotube and In2O3. The field-emission behavior was investigated in detail.
Keywords :
carbon nanotubes; cathodes; electron field emission; indium compounds; nanocomposites; nanotechnology; wide band gap semiconductors; C-In2O3; chemical inertness; cold electron emission process; cold-cathode materials; electron affinity; field emission properties; nanocomposite synthesis; poly-crystalline indium oxide; single walled carbon nanotubes; sputter resistance; wide-band-gap semiconductors; Carbon nanotubes; Chemical processes; Chromium; Conducting materials; Electron emission; Indium; Photonic band gap; Semiconductor materials; Stability; Tin;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4480984
