Improved field emission properties from poly-crystalline indium oxide coated single walled carbon nanotubes

Author

Lee, Jungwoo ; Lee, Wonjoo ; Sim, Kijo ; Yi, Whikun

Author_Institution

Hanyang Univ., Seoul

fYear

2007

fDate

8-12 July 2007

Firstpage

175

Lastpage

176

Abstract

Wide-band-gap semiconductors such as indium, tin, molybdenum, and chromium oxides have stimulated considerable attention in recent years as promising cold-cathode materials due to their remarkable physical and chemical stability during the cold electron emission process. Especially, indium oxide (direct band gap : 3.6 eV) can be one of the most attractive conductive oxides for field emission because of its relatively low electron affinity (3.5 eV), high chemical inertness and sputter resistance. We synthesized nano-composite of single-walled carbon nanotube and In₂O₃. The field-emission behavior was investigated in detail.

Keywords

carbon nanotubes; cathodes; electron field emission; indium compounds; nanocomposites; nanotechnology; wide band gap semiconductors; C-In₂O₃; chemical inertness; cold electron emission process; cold-cathode materials; electron affinity; field emission properties; nanocomposite synthesis; poly-crystalline indium oxide; single walled carbon nanotubes; sputter resistance; wide-band-gap semiconductors; Carbon nanotubes; Chemical processes; Chromium; Conducting materials; Electron emission; Indium; Photonic band gap; Semiconductor materials; Stability; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International

Conference_Location

Chicago, IL

Print_ISBN

978-1-4244-1133-7

Electronic_ISBN

978-1-4244-1134-4

Type

conf

DOI

10.1109/IVNC.2007.4480984

Filename

4480984