A micro-power low-noise amplifier for neural recording Microsystems

Author

Saberhosseini, S. Shirin

Author_Institution

ECE Dept., K.N. Toosi Univ. of Technol., Tehran, Iran

fYear

2012

fDate

15-17 May 2012

Firstpage

314

Lastpage

317

Abstract

This paper presents a low-noise and low-power amplifier, which can be used in frontend of the neural recording Microsystems. The proposed amplifier is one of the best power-size tradeoffs compared to the previous designs. By using of an active feedback configuration, midband gain is achieved without the large capacitor. The total capacitance of the architecture is only 3.8 pF. The midband gain is 40 dB, while passes signals from 1Hz to 10 kHz with an input-referred noise of 5.2 μVrms and a power dissipation of 5.3μW. This neural amplifier is designed in a 0.5-μm 2P3M N-Well CMOS process.

Keywords

CMOS analogue integrated circuits; feedback amplifiers; integrated circuit design; low noise amplifiers; low-power electronics; radiofrequency amplifiers; radiofrequency integrated circuits; recording; 2P3M N-well CMOS process; active feedback capacitor configuration; active feedback configuration midband gain; capacitance 3.8 pF; frequency 1 Hz to 10 kHz; gain 40 dB; micropower low-noise amplifier; neural amplifier; neural recording microsystem; power dissipation; voltage 5.2 muV; Artificial neural networks; Low-Noise; Midband gain; Neural recording system; Noise efficiency factor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering (ICEE), 2012 20th Iranian Conference on

Conference_Location

Tehran

Print_ISBN

978-1-4673-1149-6

Type

conf

DOI

10.1109/IranianCEE.2012.6292376

Filename

6292376