DocumentCode
3211035
Title
Growth control of carbon nanotubes by RE plasma enhanced chemical vapor deposition
Author
Suzuki, Atsushi ; Sato, Hideki ; Sakai, Takamichi ; Takegawa, Hitoshi ; Hata, Koichi ; Kajiwara, Kazuo ; Saito, Yahachi
fYear
2007
fDate
8-12 July 2007
Firstpage
193
Lastpage
194
Abstract
In this study, the CNT growth by the RF-PECVD is sensitive to the granulation condition of catalyst film. It is expected that further precise control of the granulation of catalyst film enables further improvement of controllability of CNT growth that gives better FE characteristics.
Keywords
carbon nanotubes; catalysts; field emission; plasma CVD; C; FE characteristics; RF plasma enhanced chemical vapor deposition; RF-PECVD; carbon nanotubes growth control; catalyst film granulation; field emission properties; Carbon nanotubes; Chemical vapor deposition; Hydrogen; Inductors; Iron; Plasma chemistry; Radio frequency; Scanning electron microscopy; Substrates; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4480991
Filename
4480991
Link To Document