• DocumentCode
    3211058
  • Title

    Reliability assessment of ultra-thin HfO2 oxides with TiN gate and polysilicon-n+ gate

  • Author

    Garros, X. ; Leroux, C. ; Reinibold, G. ; Mitard, J. ; Guillaumot, B. ; Martin, F. ; Autran, J.L.

  • Author_Institution
    CEA-Leti, Grenoble, France
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    176
  • Lastpage
    180
  • Abstract
    In this paper, we propose an extended study of the reliability of ultra-thin HfO2 oxides (EOT<1.5 nm) with polysilicon and TiN gate. Breakdown of the dielectric stacks is shown to be well correlated to trapping in the oxide or to SILC measurements, depending on the stress polarity. Long-term reliability of these high-K dielectrics is also analyzed. At same EOT, HfO2 generally demonstrates higher reliability than SiO2. On high quality stacks, a typical variation of TBD with EOT is also emphasized.
  • Keywords
    dielectric thin films; electric breakdown; hafnium compounds; integrated circuit reliability; semiconductor device breakdown; silicon; titanium compounds; 1.5 nm; HfO2; SiO2; TiN gate; dielectric stacks breakdown; long-term reliability; polysilicon-n+ gate; reliability assessment; stress polarity; ultra-thin HfO2 oxides; Annealing; Electric breakdown; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon compounds; Stress; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315320
  • Filename
    1315320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3211058