• DocumentCode
    3211108
  • Title

    Magnetoresistive random access memory (MRAM) and reliability

  • Author

    Hughes, Brian

  • Author_Institution
    IBM Almaden Res. Center, San Jose, CA, USA
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    194
  • Lastpage
    199
  • Abstract
    This paper provides an overview of the design and operation of, and materials used in, magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker will provide background information on MRAM architectures and discuss novel reliability problems inherent to MRAM. Reliability issues and concerns will be discussed and illustrated with examples wherever possible. The intention of the paper is to give attendees a basic and broad introduction to the potential reliability issues and challenges raised by this new memory form.
  • Keywords
    magnetic storage; magnetoresistive devices; random-access storage; reliability; design; magnetoresistive random access memory; operation; reliability; reliability engineering perspective; reliability issues; reliability problems; Antiferromagnetic materials; FETs; Magnetic materials; Magnetic tunneling; Magnetoresistance; Polarization; Random access memory; Reliability engineering; Thermal resistance; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315323
  • Filename
    1315323