DocumentCode
3211108
Title
Magnetoresistive random access memory (MRAM) and reliability
Author
Hughes, Brian
Author_Institution
IBM Almaden Res. Center, San Jose, CA, USA
fYear
2004
fDate
25-29 April 2004
Firstpage
194
Lastpage
199
Abstract
This paper provides an overview of the design and operation of, and materials used in, magnetoresistive random access memory (MRAM) with emphasis from a reliability engineering perspective. The speaker will provide background information on MRAM architectures and discuss novel reliability problems inherent to MRAM. Reliability issues and concerns will be discussed and illustrated with examples wherever possible. The intention of the paper is to give attendees a basic and broad introduction to the potential reliability issues and challenges raised by this new memory form.
Keywords
magnetic storage; magnetoresistive devices; random-access storage; reliability; design; magnetoresistive random access memory; operation; reliability; reliability engineering perspective; reliability issues; reliability problems; Antiferromagnetic materials; FETs; Magnetic materials; Magnetic tunneling; Magnetoresistance; Polarization; Random access memory; Reliability engineering; Thermal resistance; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315323
Filename
1315323
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