Title :
Reliability properties of low voltage PZT ferroelectric capacitors and arrays
Author :
Rodriguez, J. ; Remack, K. ; Boku, K. ; Udayakumar, K.R. ; Aggarwal, S. ; Summerfelt, S. ; Moise, T. ; McAdams, H. ; McPherson, I. ; Bailey, R. ; Depner, M. ; Fox, G.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report on the reliability properties of a high-density ferroelectric memory based on a 70nm thick MOCVD PZT process technology. We observe that the polycrystalline texture plays an important role in the electrical and reliability properties of these thin films. Data retention loss is primarily due to the imprint effect, which shows a 1.5eV "Time-to-Fail" activation energy. Good correlation is observed between stand alone test capacitors and memory arrays integrated into a 130nm, 5LM, Cu/FSG logic CMOS process. Excellent bit endurance properties are observed on fully packaged memory arrays, with no degradation up to 1013 read/write cycles.
Keywords :
CMOS integrated circuits; MOCVD coatings; ferroelectric capacitors; ferroelectric materials; ferroelectric storage; ferroelectric thin films; lead compounds; logic circuits; reliability; 1.5 eV; 130 nm; 70 nm; 70nm thick MOCVD PZT process technology; PZT; PbZrO3TiO3; data retention loss; electrical properties; fully packaged memory arrays; high-density ferroelectric memory; imprint effect; low voltage PZT ferroelectric arrays; low voltage PZT ferroelectric capacitors; memory arrays; p9lycrystalline texture; reliability properties; stand alone test capacitors; CMOS logic circuits; CMOS process; Capacitors; Ferroelectric materials; Logic arrays; Logic testing; Low voltage; MOCVD; Packaging; Transistors;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315324
