DocumentCode
3211164
Title
Reliability of flash memory erasing operation under high tunneling electric fields
Author
Chimenton, Andrea ; Olivo, Piero
Author_Institution
Dipt. di Ingegneria, Ferrara Univ., Italy
fYear
2004
fDate
25-29 April 2004
Firstpage
216
Lastpage
221
Abstract
Experimental results show that the use of high electric fields during erasing of flash memories leads to a degradation of the reliability due to the increase of the erratic erase. The generation of new erratic bits during cycling has been related to the Anode Hole Injection phenomena.
Keywords
flash memories; semiconductor device reliability; tunnelling; anode hole injection phenomena; erratic bits; erratic erase; flash memory erasing operation reliability; high tunneling electric fields; Anodes; Degradation; Failure analysis; Flash memory; Iron; Leakage current; Physics; Probability distribution; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315326
Filename
1315326
Link To Document