Title :
Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects
Author :
Hu, C.-K. ; Canaperi, D. ; Chen, S.T. ; Gignac, Lynne ; Herbst, B. ; Kaldor, S. ; Krishnan, M. ; Liniger, E. ; Rath, D.L. ; Restaino, D. ; Rosenberg, R. ; Rubino, J. ; Seo, S.-C. ; Simon, A. ; Smith, S. ; Tseng, W.-T.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Electromigration in Cu Damascene lines capped with either a CoWP, Ta/TaN, SiNx, or SiCxNyHz layer was reviewed. A thin CoWP or Ta/TaN cap on top of the Cu line surface significantly reduced interface diffusion and improved the electromigration lifetime when compared with lines capped with SiNx or SiCxNyHz. Activation energies for electromigration were found to be 2.0 eV, 1.4 eV, and 0.85-1.1 eV for the Cu lines capped with CoWP, Ta/TaN, and SiNx or SiCxNyHz, respectively.
Keywords :
cobalt alloys; copper; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; phosphorus alloys; silicon compounds; tantalum; tantalum alloys; tungsten alloys; 0.85 to 1.1 eV; 1.4 eV; 2.0 eV; CoWP; Cu; Cu Damascene lines; Cu/low K interconnects; SiCxNyHz; SiNx; Ta-TaN; electromigration lifetime; electromigration reliability improvement; interface diffusion; overlayers; Atomic measurements; Dielectric materials; Electric potential; Electromigration; Microelectronics; Silicon compounds; Size measurement; Spectroscopy; Testing; Transmission electron microscopy;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315327
