Effects of overlayers on electromigration reliability improvement for Cu/low K interconnects

Author

Hu, C.-K. ; Canaperi, D. ; Chen, S.T. ; Gignac, Lynne ; Herbst, B. ; Kaldor, S. ; Krishnan, M. ; Liniger, E. ; Rath, D.L. ; Restaino, D. ; Rosenberg, R. ; Rubino, J. ; Seo, S.-C. ; Simon, A. ; Smith, S. ; Tseng, W.-T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2004

fDate

25-29 April 2004

Firstpage

222

Lastpage

228

Abstract

Electromigration in Cu Damascene lines capped with either a CoWP, Ta/TaN, SiN_x, or SiC_xN_yH_z layer was reviewed. A thin CoWP or Ta/TaN cap on top of the Cu line surface significantly reduced interface diffusion and improved the electromigration lifetime when compared with lines capped with SiN_x or SiC_xN_yH_z. Activation energies for electromigration were found to be 2.0 eV, 1.4 eV, and 0.85-1.1 eV for the Cu lines capped with CoWP, Ta/TaN, and SiN_x or SiC_xN_yH_z, respectively.

Keywords

cobalt alloys; copper; electromigration; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; phosphorus alloys; silicon compounds; tantalum; tantalum alloys; tungsten alloys; 0.85 to 1.1 eV; 1.4 eV; 2.0 eV; CoWP; Cu; Cu Damascene lines; Cu/low K interconnects; SiC_xN_yH_z; SiN_x; Ta-TaN; electromigration lifetime; electromigration reliability improvement; interface diffusion; overlayers; Atomic measurements; Dielectric materials; Electric potential; Electromigration; Microelectronics; Silicon compounds; Size measurement; Spectroscopy; Testing; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315327

Filename

1315327