Title :
60-GHz monolithic oscillator using InGaP/InGaAs/GaAs HEMT technology
Author :
Kawasaki, Yoji ; Shirakawa, Kazuhiro ; Ohashi, Yoshimasa ; Saito, Takashi
Author_Institution :
Acv. Millimeter Wave Technol. Co. Ltd., Nakahara, Japan
Abstract :
Using 0.11-/spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT technology, we have developed a 60 GHz buffered free-running monolithic oscillator which has an output power of 9.1 dBm at 59.7 GHz and a phase noise of -60 dBc/Hz at 100 kHz from the carrier frequency. We operated the oscillator´s HEMT in a reverse channel configuration and introduced an empirical nonlinear HEMT model for the configuration.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; S-parameters; equivalent circuits; field effect MIMIC; gallium arsenide; gallium compounds; indium compounds; millimetre wave oscillators; semiconductor device models; 0.11 micron; 59.7 to 60 GHz; EHF; HEMT technology; InGaP-InGaAs-GaAs; MIMIC; MM-wave IC; buffered free-running oscillator; monolithic oscillator; nonlinear HEMT model; pseudomorphic HEMT; reverse channel configuration; Electrical resistance measurement; Feedback circuits; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Millimeter wave radar; Millimeter wave technology; Oscillators; PHEMTs;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406029
