Crystallization mechanism in films along GeTe-SbTe pseudo-binary line

Author

Morales-Sanchez, E. ; Prokhorov, E. ; Salas, J. A Muñoz ; González-Hernández, J. ; Trapaga, G.

Author_Institution

CICATA-IPN, Queretaro, Mexico

fYear

2009

fDate

10-13 Jan. 2009

Firstpage

1

Lastpage

3

Abstract

The aim of this work is to compare the isothermal crystallization kinetic in the films along GeTe-Sb₂Te₃ line with composition Ge₂Sb₂Te₅, Ge₁Sb₂Te₄, Ge₁Sb₄Te₇ and Ge₄Sb₁Te₅ using mainly Johnson-Mehl-Avrami-Kolmogorov (JMAK) model. Results obtained have shown different crystallization mechanism in the investigated films. In Ge₂Sb₂Te₅ and Ge₁Sb₂Te₄ films the analysis of the kinetic results (Avrani coefficient) showed that at the beginning of crystallization a metastable phase appeared with the Ge₁Sb₄Te₇ composition, this is followed by the nucleation and growth of the stable fcc phase up to full crystallization. In contrast Ge₄Sb₁Te₅ and Ge₁Sb₄Te₇ films show diffusion control growing from small dimension grains with decreasing nucleation rate.

Keywords

antimony compounds; chalcogenide glasses; crystallisation; diffusion; germanium compounds; nucleation; phase change materials; semiconductor thin films; Ge₂Sb₂Te₅; Ge₄SbTe₅; GeSb₂Te₄; GeSb₄Te₇; Johnson-Mehl-Avrami-Kolmogorov model; diffusion; films; isothermal crystallization kinetics; metastable phase; nucleation rate; pseudobinary line; small dimension grains; stable fee phase growth; Amorphous materials; Annealing; Crystalline materials; Crystallization; Electrical resistance measurement; Isothermal processes; Kinetic theory; Optical films; Phase change materials; Reflectivity; Crystallization; growth phase; nucleation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control,CCE,2009 6th International Conference on

Conference_Location

Toluca

Print_ISBN

978-1-4244-4688-9

Electronic_ISBN

978-1-4244-4689-6

Type

conf

DOI

10.1109/ICEEE.2009.5393373

Filename

5393373