Title :
Fabrication and emission characteristics from GaAs FEAs
Author :
Han, Gui ; Takigawa, Yoshihito ; Liu, Xin ; Shimomura, Masaru ; Neo, Yoichiro ; Mimura, Hidenori
Author_Institution :
Shizuoka Univ., Hamamatsu
Abstract :
On the basis of previous research on optical modulation of Si FEAs, we present here, GaAs FEAs, their fabrication, experiment setup, and photo-response characteristics. Compare to silicon, GaAs is well known in optoelectronics, integrated optics, high frequency and ultra-fast electronic devices due to its high and direct band gap (1.41eV), and even fast electron mobility.
Keywords :
III-V semiconductors; electron field emission; electron mobility; field emitter arrays; gallium arsenide; FEA fabrication; GaAs; band gap; electron mobility; electron volt energy 1.41 eV; emission characteristics; field emitter arrays; high frequency electronic devices; integrated optics; optoelectronics; photo-response characteristics; ultra-fast electronic devices; Electron beams; Etching; Fabrication; Frequency; Gallium arsenide; Optical modulation; Optical surface waves; Pulse modulation; Semiconductor laser arrays; Surface treatment;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4481012
