Title :
A low cost 3.6V single-supply GaAs power amplifier IC for the 1.9-GHz DECT system
Author :
Griffiths, James ; Sadhir, V.
Author_Institution :
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
Abstract :
A GaAs power amplifier IC in a SOIC-16 plastic package has been developed for the 1.9 GHz Digital European Cordless Telephone (DECT) system. The power amplifier consists of two stages with all matching structures on chip and has a total area of 1.84 mm/sup 2/. At -2 dBm input power and 3.6 volts, the typical power amplifier achieves 26 dBm output power with 30% power-added efficiency, while operating from a single power supply in the SOIC-16 plastic package.<>
Keywords :
MMIC power amplifiers; cordless telephone systems; digital radio; field effect MMIC; integrated circuit packaging; land mobile radio; plastic packaging; 1.9 GHz; 3.6 V; 30 percent; DECT system; GaAs; SOIC-16 plastic package; digital European cordless telephone; input power; matching structures; output power; power-added efficiency; single-supply power amplifier IC; Costs; FETs; Frequency; Gallium arsenide; Minimization; Packaging; Plastics; Power amplifiers; Power generation; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406030
