DocumentCode
3211385
Title
A low cost 3.6V single-supply GaAs power amplifier IC for the 1.9-GHz DECT system
Author
Griffiths, James ; Sadhir, V.
Author_Institution
ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
535
Abstract
A GaAs power amplifier IC in a SOIC-16 plastic package has been developed for the 1.9 GHz Digital European Cordless Telephone (DECT) system. The power amplifier consists of two stages with all matching structures on chip and has a total area of 1.84 mm/sup 2/. At -2 dBm input power and 3.6 volts, the typical power amplifier achieves 26 dBm output power with 30% power-added efficiency, while operating from a single power supply in the SOIC-16 plastic package.<>
Keywords
MMIC power amplifiers; cordless telephone systems; digital radio; field effect MMIC; integrated circuit packaging; land mobile radio; plastic packaging; 1.9 GHz; 3.6 V; 30 percent; DECT system; GaAs; SOIC-16 plastic package; digital European cordless telephone; input power; matching structures; output power; power-added efficiency; single-supply power amplifier IC; Costs; FETs; Frequency; Gallium arsenide; Minimization; Packaging; Plastics; Power amplifiers; Power generation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406030
Filename
406030
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