Title :
SRAM SER in 90, 130 and 180 nm bulk and SOI technologies
Author :
Cannon, Ethan H. ; Reinhardt, Daniel D. ; Gordon, Michael S. ; Makowenskyj, Paul S.
Author_Institution :
IBM Microeletronics, Essex Junction, VT, USA
Abstract :
We investigate the soft error rate (SER) of bulk and SOI SRAMs at the 90, 130 and 180 nm technology nodes. We use accelerated testing and Monte Carlo modeling to determine SER sensitivity to different radiation sources; we can therefore predict the product SER based on the radiation flux. Lifetests performed underground, near sea level, and at 10,000 feet confirm the predicted SER levels.
Keywords :
SRAM chips; integrated circuit reliability; radiation hardening (electronics); semiconductor device reliability; silicon-on-insulator; 130 nm; 180 nm; 90 nm; Monte Carlo modeling; SOI technologies; SRAM SER; radiation sources; soft error rate; Alpha particles; Error analysis; Ionizing radiation; Life estimation; Monte Carlo methods; Neutrons; Random access memory; Silicon; Testing; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315341
