Title :
Influence of synthesis temperature on field emission properties of ZnO nanostructures
Author :
Hou, Kai ; Lei, Wei ; Zhang, Xiaobing ; Li, Chi ; Yang, Xiaxi ; Qu, Ke
Author_Institution :
Southeast Univ., Nanjing
Abstract :
In this paper, we investigate the influence of synthesis temperature on the field emission properties of ZnO nanostructures. The ZnO nanostructures are synthesized by thermal oxidization zinc vapor method. Experimental results illustrate that the geometric morphology of ZnO nanostructures is strongly dependent upon growth temperature.
Keywords :
II-VI semiconductors; field emission; heat treatment; nanostructured materials; oxidation; wide band gap semiconductors; zinc compounds; SEM; ZnO; field emission properties; geometric morphology; synthesis temperature; thermal oxidization zinc vapor method; zinc oxide nanostructures; Fabrication; Flat panel displays; Morphology; Nanowires; Photonic band gap; Power engineering and energy; Semiconductor nanostructures; Temperature dependence; X-ray scattering; Zinc oxide;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4481017
