DocumentCode
3211530
Title
Ion Back-Bombardment of GaAs Photocathodes Inside DC High Voltage Electron Guns
Author
Grames, J. ; Adderley, P. ; Brittian, J. ; Charles, D. ; Clark, J. ; Hansknecht, J. ; Poelker, M. ; Stutzman, M. ; Surles-Law, K.
Author_Institution
Thomas Jefferson National Accelerator Facility, Newport News, VA 23606, U.S.A. grames@jlab.org
fYear
2005
fDate
16-20 May 2005
Firstpage
2875
Lastpage
2877
Abstract
DC high voltage GaAs photoguns are key components at accelerator facilities worldwide. New experiments and new accelerator facilities demand improved performance from these guns, in particular higher current operation and longer photocathode operating lifetime. This conference submission explores bulk GaAs photocathode lifetime as a function of beam current, active photocathode area, laser spot size and the vacuum of the gun and beam line. Lifetime measurements were made at 100 μA, a beam current relevant for accelerators like CEBAF, and at beam currents of 1 mA and 5 mA, a regime that is interesting for high current Free Electron Laser (FEL) and Energy Recovery Linac (ERL) operation.
Keywords
Cathodes; Electron accelerators; Electron guns; Free electron lasers; Gallium arsenide; Ion accelerators; Laser beams; Lifetime estimation; Particle beams; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Particle Accelerator Conference, 2005. PAC 2005. Proceedings of the
Print_ISBN
0-7803-8859-3
Type
conf
DOI
10.1109/PAC.2005.1591299
Filename
1591299
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