DocumentCode
3211581
Title
Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model
Author
Lan, Yung-Chiang ; Huang, Ping-Sang ; Lin, Ming-Chieh
Author_Institution
Nat. Cheng Kung Univ., Tainan
fYear
2007
fDate
8-12 July 2007
Firstpage
263
Lastpage
264
Abstract
This paper studies the resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate. In this study, the carrier transport model developed in our previous works (Lan et al., 2005) is applied to investigate the resistance effects of the CNT (carbon nanotube) grown on doped silicon substrate.
Keywords
carbon nanotubes; carrier mobility; nanostructured materials; C; Fowler-Nordheim plot; Si; carbon nanotube; carrier transport model; classical transport model; field emission; one dimensional nanostructure; resistance effect; silicon substrate; Carbon nanotubes; Charge carrier density; Conductivity; Electronic mail; Physics; Poisson equations; Resistors; Silicon; Solid modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-1133-7
Electronic_ISBN
978-1-4244-1134-4
Type
conf
DOI
10.1109/IVNC.2007.4481023
Filename
4481023
Link To Document