Title :
Resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate: A simulation study using classical transport model
Author :
Lan, Yung-Chiang ; Huang, Ping-Sang ; Lin, Ming-Chieh
Author_Institution :
Nat. Cheng Kung Univ., Tainan
Abstract :
This paper studies the resistance effects on field emission for one-dimensional nanostructure grown on silicon substrate. In this study, the carrier transport model developed in our previous works (Lan et al., 2005) is applied to investigate the resistance effects of the CNT (carbon nanotube) grown on doped silicon substrate.
Keywords :
carbon nanotubes; carrier mobility; nanostructured materials; C; Fowler-Nordheim plot; Si; carbon nanotube; carrier transport model; classical transport model; field emission; one dimensional nanostructure; resistance effect; silicon substrate; Carbon nanotubes; Charge carrier density; Conductivity; Electronic mail; Physics; Poisson equations; Resistors; Silicon; Solid modeling; Temperature;
Conference_Titel :
Vacuum Nanoelectronics Conference, 2007. IVNC. IEEE 20th International
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-1133-7
Electronic_ISBN :
978-1-4244-1134-4
DOI :
10.1109/IVNC.2007.4481023
