Sizing of MOS device in LC-tank oscillators

Author

Chen, Jian ; Jonsson, Fredrik ; Zheng, Li-Rong ; Tenhunen, Hannu ; Zhou, Dian

Author_Institution

R. Inst. of Technol., Stockholm

fYear

2007

fDate

19-20 Nov. 2007

Firstpage

1

Lastpage

6

Abstract

Since previous publications show conflicting results about sizing device, relationship between device size and 1/f² phase noise is studied and closed-form equations are derived in order to help designers to size devices in LC-tank oscillators for good phase noise performance. The analysis is divided into two steps. Firstly, periodic noise transfer functions of each VCO noise source to the output of switch FETs are derived, and the impact of sizing on these functions is discussed. Secondly, phase noise equations are derived with these functions. Experiments show that phase noise predicted by the equations agrees with that from simulations.

Keywords

MIS devices; field effect transistors; transfer functions; voltage-controlled oscillators; LC-tank oscillators; MOS device; VCO noise source; closed-form equations; device size; periodic noise; phase noise; switch FET; transfer functions; Active noise reduction; Differential equations; FETs; MOS devices; Phase noise; Predictive models; Switches; Switching circuits; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Norchip, 2007

Conference_Location

Aalborg

Print_ISBN

978-1-4244-1516-8

Electronic_ISBN

978-1-4244-1517-5

Type

conf

DOI

10.1109/NORCHP.2007.4481046

Filename

4481046