Title :
Bipolar SCR ESD protection in a 0.25 μm Si-Ge process using subcollector region modification
Author :
Vashchenko, V.A. ; Concannon, A. ; Beek, M. Ter ; Hopper, P.
Author_Institution :
Nat. Semicond. Corp., Santa Clara, CA, USA
Abstract :
ESD operation of new Bipolar SCR (BSCR) devices for 0.25 μm Si-Ge process with shallow epi-layer was studied. Two new BSCR device variants are proposed and validated using 2-D physical process and device simulation followed by the test chip based ESD measurements. Both variants rely on modifications to the subcollector to reduce P-SCR-emitter region isolation.
Keywords :
Ge-Si alloys; bipolar integrated circuits; electrostatic discharge; integrated circuit reliability; 0.25 μm Si-Ge process; 0.25 micron; ESD; bipolar SCR ESD protection; device simulation; subcollector; subcollector region modification; Anodes; BiCMOS integrated circuits; Bipolar transistor circuits; Conductivity; Electrostatic discharge; Protection; Semiconductor device measurement; Testing; Thyristors; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315373
