• DocumentCode
    3212285
  • Title

    Degradation mechanisms of siloxane-based thermal interface materials under reliability stress conditions

  • Author

    Dal, Sheila Lira B

  • Author_Institution
    Intel Technol. Philippines Inc., Cavite, Philippines
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    537
  • Lastpage
    542
  • Abstract
    This paper describes the degradation behavior of siloxanes as thermal interface materials (TIM) in semiconductor packages. It tackles existing literature degradation studies on siloxane materials. It then presents the failure and material analysis findings and explains the degradation behavior of siloxane-based TIM when exposed to different reliability stresses such as: (1) bake at high temperature (2) moisture exposure and (3) temperature plus moisture exposure. A good correlation was established between known chemical reactions and analysis data after stress. With these data, a good understanding of the reliability performance of siloxanes as thermal interface material was established.
  • Keywords
    failure analysis; semiconductor device breakdown; semiconductor device packaging; semiconductor device reliability; silicon compounds; bake; degradation behavior; degradation mechanisms; moisture exposure; reliability stress conditions; semiconductor packages; siloxane-based thermal interface materials; temperature plus moisture exposure; thermal interface material; Chemical analysis; Data analysis; Failure analysis; Materials reliability; Moisture; Semiconductor device packaging; Semiconductor materials; Temperature; Thermal degradation; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315386
  • Filename
    1315386