DocumentCode
3212285
Title
Degradation mechanisms of siloxane-based thermal interface materials under reliability stress conditions
Author
Dal, Sheila Lira B
Author_Institution
Intel Technol. Philippines Inc., Cavite, Philippines
fYear
2004
fDate
25-29 April 2004
Firstpage
537
Lastpage
542
Abstract
This paper describes the degradation behavior of siloxanes as thermal interface materials (TIM) in semiconductor packages. It tackles existing literature degradation studies on siloxane materials. It then presents the failure and material analysis findings and explains the degradation behavior of siloxane-based TIM when exposed to different reliability stresses such as: (1) bake at high temperature (2) moisture exposure and (3) temperature plus moisture exposure. A good correlation was established between known chemical reactions and analysis data after stress. With these data, a good understanding of the reliability performance of siloxanes as thermal interface material was established.
Keywords
failure analysis; semiconductor device breakdown; semiconductor device packaging; semiconductor device reliability; silicon compounds; bake; degradation behavior; degradation mechanisms; moisture exposure; reliability stress conditions; semiconductor packages; siloxane-based thermal interface materials; temperature plus moisture exposure; thermal interface material; Chemical analysis; Data analysis; Failure analysis; Materials reliability; Moisture; Semiconductor device packaging; Semiconductor materials; Temperature; Thermal degradation; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315386
Filename
1315386
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