The impact of process optimization on planar THz-Schottky device reliability

Author

Mottet, Bastian ; Sydlo, Cezary ; Kögel, Benjamin ; De Robillard, Quentin ; Cojocari, Oleg ; Hartnagel, H.L.

Author_Institution

Inst. of Microwave Eng., Darmstadt Univ. of Technol., Germany

fYear

2004

fDate

25-29 April 2004

Firstpage

575

Lastpage

576

Abstract

The technological complexity as well as space-application quality standards require sophisticated process control and optimization for reliability improvement of planar THz-Schottky devices. Degradation mechanisms are initiated using, the Transmission Line Pulse (TLP)-method and monitored as a function of the number of applied pulses. The degradation analysis is performed by IV-measurements on the one side and by Transmission electron microscopy (TEM) on the other side.

Keywords

Schottky effect; Schottky gate field effect transistors; electric breakdown; process monitoring; semiconductor device reliability; space vehicle electronics; transmission electron microscopy; TEM; applied pulses; degradation mechanisms; planar THz-Schottky device reliability; process control; process optimization; reliability improvement; space-application quality standards; technological complexity; Degradation; Fabrication; Life estimation; Microwave technology; Plasma measurements; Process control; Space technology; Stress; Submillimeter wave technology; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315396

Filename

1315396