DocumentCode
3212541
Title
Direct determination of interface and bulk traps in stacked HfO2 dielectrics using charge pumping method
Author
Hou, T.H. ; Wang, M.F. ; Mai, K.-L. ; Lin, Y.M. ; Yang, M.H. ; Yao, L.G. ; Jin, Y. ; Chen, C. ; Liang, M.S.
Author_Institution
Adv. Module Technol. Div., Taiwan Semicond. Manuf. Co., Hsin-Chu, Taiwan
fYear
2004
fDate
25-29 April 2004
Firstpage
581
Lastpage
582
Abstract
For the first time, trap density at SiO2/Si interface, HfO2/SiO2 interface, and HfO2 bulk of stacked HfO2/SiO2 dielectrics are quantified respectively with a simple charge pumping method. It was found that the amount of each individual type of traps can be well correlated to specific process conditions as well as device performance, which makes such innovative characterization method very powerful for process optimization of high-k dielectrics.
Keywords
dielectric thin films; electric breakdown; hafnium compounds; permittivity; semiconductor device breakdown; semiconductor device reliability; semiconductor-insulator boundaries; silicon; silicon compounds; HfO2-SiO2; HfO2/SiO2 interface; SiO2-Si; SiO2/Si interface; bulk traps; charge pumping method; interface traps; stacked HfO2 dielectrics; Charge pumps; Electron mobility; Electron traps; Frequency measurement; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOS devices; Niobium; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315399
Filename
1315399
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