• DocumentCode
    3212585
  • Title

    Influence of charge trapping on AC reliability of high-k dielectrics

  • Author

    Kerber, M. ; Duschl, R. ; Reisinger, H. ; Jakschik, S. ; Schröder, U. ; Hecht, T. ; Kudelka, S.

  • Author_Institution
    Infineon Technol., Munich, Germany
  • fYear
    2004
  • fDate
    25-29 April 2004
  • Firstpage
    585
  • Lastpage
    586
  • Abstract
    The lifetime of Al2O3 dielectrics in trench DRAM capacitors is investigated under bipolar AC stress. Other than generally expected from literature a frequency dependent lifetime reduction together with lower voltage acceleration and steeper Weibull distributions are found. This is attributed to the trapping characteristics of Al2O3 high-k dielectrics.
  • Keywords
    DRAM chips; alumina; capacitors; dielectric thin films; integrated circuit reliability; permittivity; semiconductor device breakdown; semiconductor device reliability; AC reliability; Al2O3; Al2O3 dielectrics; charge trapping; frequency dependent lifetime reduction; high-k dielectrics; lower voltage acceleration; steeper Weibull distributions; trench DRAM capacitors; Acceleration; Capacitors; Electric breakdown; Frequency dependence; High-K gate dielectrics; Integrated circuit reliability; Random access memory; Silicon; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
  • Print_ISBN
    0-7803-8315-X
  • Type

    conf

  • DOI
    10.1109/RELPHY.2004.1315401
  • Filename
    1315401
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3212585