Title :
Study of magnesium doped gallium nitride films grown by low pressure-metalorganic chemical vapor deposition
Author :
Guarneros, C. ; Sánchez, V.
Author_Institution :
Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City, Mexico
Abstract :
We present results of room temperature and low temperature photoluminescence (PL) measurements of GaN:Mg grown by low pressure metalorganic chemical vapor deposition. The effect on these PL measurements with different Mg concentrations was investigated. The luminescence from p-type Mg-doped samples is dominated by shallow-donor-shallow-acceptor pair recombination and by deep blue centers at 3.0 eV. The X-ray pattern shows that the p-GaN layers grow with (0002) preferential orientation. The GaN:Mg layers thermal annealing does not show significant changes in PL and Hall effect measurements.
Keywords :
Hall effect; III-V semiconductors; MOCVD; annealing; colour centres; doping profiles; gallium compounds; impurity states; magnesium; photoluminescence; semiconductor doping; semiconductor growth; semiconductor thin films; texture; wide band gap semiconductors; (0002) preferential orientation; GaN:Mg; Hall effect measurements; X-ray pattern; deep blue centers; low pressure metalorganic chemical vapor deposition; low temperature photoluminescence; magnesium doped gallium nitride films; room temperature photoluminescence; shallow-donor-shallow-acceptor pair recombination; temperature 293 K to 298 K; thermal annealing; Annealing; Chemical vapor deposition; Gallium nitride; Hall effect; III-V semiconductor materials; Luminescence; Magnesium; Photoluminescence; Pressure measurement; Temperature measurement; DAP emission; Hall Effect; III-Nitride semiconductors; Mg-doped GaN; Photoluminescence; thermal annealing;
Conference_Titel :
Electrical Engineering, Computing Science and Automatic Control,CCE,2009 6th International Conference on
Conference_Location :
Toluca
Print_ISBN :
978-1-4244-4688-9
Electronic_ISBN :
978-1-4244-4689-6
DOI :
10.1109/ICEEE.2009.5393453
