Title :
Gate fault isolation and parametric characterization through the use of Atomic Force Probing
Author_Institution :
Multiprobe, Inc., Santa Barbara, CA, USA
Abstract :
The current work is to demonstrate the power of a new class of analytical tool known as the Atomic Force Prober or AFP. The AFP is used to characterize a gate oxide breakdown both through the use of conductive or pico-current imaging and subsequent parametric characterization of the associated transistor.
Keywords :
atomic force microscopy; electric breakdown; integrated circuit reliability; integrated circuit testing; semiconductor device breakdown; semiconductor device reliability; semiconductor device testing; tunnelling; Atomic Force Probing; conductive imaging; gate fault isolation; gate oxide breakdown; parametric characterization; pico-current imaging; Atomic force microscopy; Contact resistance; Dielectric breakdown; Implants; Ohmic contacts; Page description languages; Probes; Tungsten; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315417
