DocumentCode
3212905
Title
Impact of temperature variation on CNTFET device characteristics
Author
Sinha, Sujeet Kumar ; Chaudhury, Santanu
Author_Institution
Electr. Eng. Dept., NIT, Silchar, India
fYear
2013
fDate
16-18 Dec. 2013
Firstpage
1
Lastpage
5
Abstract
In this paper we compare and justify the advantage of CNTFET devices over MOSFET devices in nanometer regime, by varying oxide thickness. Thereafter we have analyzed the effect of temperature in the characteristics of CNTFET devices. After simulation of Stanford nano-model-39 of CNTFET on HSPICE tool we observed that the effect of temperature on threshold voltage of CNTFET is negligibly small. Since there is little variation in threshold voltage so the leakage power due to temperature in scaled down scenario is very less compare to MOSFET devices.
Keywords
MOSFET; carbon nanotube field effect transistors; CNTFET device characteristics; HSPICE tool; MOSFET device; Stanford nanomodel-39 simulation; carbon nanotube; oxide thickness; temperature variation; CNTFETs; Carbon nanotubes; Logic gates; MOSFET; Quantum capacitance; Temperature; Threshold voltage; CNTFET; MOSFET; oxide thickness; temperature; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Control, Automation, Robotics and Embedded Systems (CARE), 2013 International Conference on
Conference_Location
Jabalpur
Type
conf
DOI
10.1109/CARE.2013.6733774
Filename
6733774
Link To Document