DocumentCode :
3213021
Title :
Nanoelectronics approach based on nano structures & nanomaterial
Author :
Ravindiran ; Shankar, Prithvi
Author_Institution :
ECE Dept., Saveetha Univ., Chennai, India
fYear :
2011
fDate :
20-22 July 2011
Firstpage :
721
Lastpage :
726
Abstract :
This paper gives detailed view on the Nanoelectronics and the approaches adopted for improving the speed of the device without compromising the performance. Performance of the device is mainly based on the speed of operation, Operating voltage and size of the device. In the recent years the two main approaches adopted for optimizing the device performance are new and modified device architectures and using alternate materials which are different from the normal materials used for electronics. Device structures have been modified and designed according to the application. Device modelling is the approach adopted by various companies and research groups in the universities to modify and design new device structures using device modelling and simulation software´s. Performance of the device can be improved by using alternate materials such as GaAs, ZnO, BiTe, In, TiO, Fe, Co, Al, Zr etc. Materials other than silicon and germanium with better optoelectronic and electronic properties have been used to improve the performance of the device. The property of the materials can be improved by doping different materials at different compositions and preparing nanomaterials by using different preparation techniques. Materials property is analyzed by using different characterization techniques such as XRD, SEM, TEM, UV, LCR, etc.
Keywords :
nanoelectronics; nanostructured materials; semiconductor doping; LCR; SEM; TEM; UV; XRD; doping; germanium; nanoelectronics; nanomaterial; nanostructure; optoelectronic property; silicon; Hetrojunction; Nanomaterial; Nanotechnology; Nanowire Memory; Spintronics;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Sustainable Energy and Intelligent Systems (SEISCON 2011), International Conference on
Conference_Location :
Chennai
Type :
conf
DOI :
10.1049/cp.2011.0457
Filename :
6143406
Link To Document :
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