Title :
Flash memory under cosmic & alpha irradiation
Author :
Fogle, Adam D. ; Darling, Don ; Blish, Richard C., II ; Dasko, G.
Author_Institution :
Adv. Micro Devices Inc., Sunnyvale, CA, USA
Abstract :
Neutron and proton irradiation to simulate cosmic ray jeopardy were used to establish that NOR Flash memory (conventional floating polySi gate or ONO floating gate MirrorBit™) soft error failure rate (cross section) is 4-5 orders of magnitude better than SRAM. Flash memory soft error rate for a given dose of alpha particle irradiation is much less than for the same dose from simulated cosmic rays.
Keywords :
NOR circuits; cosmic ray interactions; flash memories; neutron effects; proton effects; radiation hardening; semiconductor device reliability; NOR Flash memory; ONO floating gate MirrorBit; alpha irradiation; conventional floating polySi gate; cosmic irradiation; flash memory; neutron irradiation; proton irradiation; soft error failure rate; Flash memory; Integrated circuit reliability; Logic circuits; Neutrons; Particle beams; Protons; Random access memory; Sea level; Sea measurements; Testing;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315427
