Title :
Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
Author :
Gu, S.H. ; Wang, S. H Gu M T ; Chan, C.T. ; Zous, N.K. ; Yeh, C.C. ; Tsai, W.J. ; Lu, T.C. ; Tahui Wang ; Ku, Jin-Feng ; Chih-Yuan Lu
Author_Institution :
Macronix Int. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find programmed charge spreads further into the channel with program/erase cycle number.
Keywords :
flash memories; hot carriers; integrated circuit reliability; charge pumping technique; hot electron program/hot hole erase nitride storage flash cell; program/erase cycle number; programmed charge lateral spread; secondly programmed bit; two-bit storage nitride flash memory cell; wider trapped charge distribution; Charge carrier processes; Charge measurement; Charge pumps; Current measurement; Electron traps; Electronics industry; Flash memory cells; Industrial electronics; Table lookup; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315428
