Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

Author

Gu, S.H. ; Wang, S. H Gu M T ; Chan, C.T. ; Zous, N.K. ; Yeh, C.C. ; Tsai, W.J. ; Lu, T.C. ; Tahui Wang ; Ku, Jin-Feng ; Chih-Yuan Lu

Author_Institution

Macronix Int. Co. Ltd., Hsin-Chu, Taiwan

fYear

2004

fDate

25-29 April 2004

Firstpage

639

Lastpage

640

Abstract

The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find programmed charge spreads further into the channel with program/erase cycle number.

Keywords

flash memories; hot carriers; integrated circuit reliability; charge pumping technique; hot electron program/hot hole erase nitride storage flash cell; program/erase cycle number; programmed charge lateral spread; secondly programmed bit; two-bit storage nitride flash memory cell; wider trapped charge distribution; Charge carrier processes; Charge measurement; Charge pumps; Current measurement; Electron traps; Electronics industry; Flash memory cells; Industrial electronics; Table lookup; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International

Print_ISBN

0-7803-8315-X

Type

conf

DOI

10.1109/RELPHY.2004.1315428

Filename

1315428