Two-dimensional carrier transport in quantum nanostructures under non quantizing magnetic and high electric fields at low temperature

Group III nitrides have been one of the most promising candidates as materials because of their superior physical and chemical properties for application in devices. GaN and other group III nitrides have been extensively investigated in the recent years due to their advantageous features. CW operation of nitrides based laser diodes have already been demonstrated. In the present work the carrier transport under nonquantizing magnetic and high electric field at low temperature for two-dimensional electron in nanostructures has been investigated incorporating relevant scattering mechanisms.