Title :
Thermal runaway avoidance during burn-in
Author :
Vassighi, Arman ; Semenov, Oleg ; Sachdev, Manoj
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
In deep sub-micron technologies, increased standby leakage current in high performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under the burn-in environment leading to still higher junction temperature and possibly the thermal runaway. In this paper we investigate the thermal management of high performance processors during burn-in.
Keywords :
integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; thermal resistance; thermal stresses; burn-in; deep sub-micron technologies; high performance processors; increased junction temperature; standby leakage current; thermal runaway avoidance; Acceleration; Bismuth; Leakage current; Microprocessors; Ovens; Power dissipation; Temperature; Thermal management; Thermal resistance; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315436
