DocumentCode
3213205
Title
Thermal runaway avoidance during burn-in
Author
Vassighi, Arman ; Semenov, Oleg ; Sachdev, Manoj
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear
2004
fDate
25-29 April 2004
Firstpage
655
Lastpage
656
Abstract
In deep sub-micron technologies, increased standby leakage current in high performance processors results in increased junction temperature. Elevated junction temperature causes further increase on the standby leakage current. The standby leakage current is expected to increase even more under the burn-in environment leading to still higher junction temperature and possibly the thermal runaway. In this paper we investigate the thermal management of high performance processors during burn-in.
Keywords
integrated circuit reliability; semiconductor device breakdown; semiconductor device reliability; thermal resistance; thermal stresses; burn-in; deep sub-micron technologies; high performance processors; increased junction temperature; standby leakage current; thermal runaway avoidance; Acceleration; Bismuth; Leakage current; Microprocessors; Ovens; Power dissipation; Temperature; Thermal management; Thermal resistance; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN
0-7803-8315-X
Type
conf
DOI
10.1109/RELPHY.2004.1315436
Filename
1315436
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