Title :
Reliability model and implementation for EEPROM emulation using flash memory
Author :
He, Chen ; Kuhn, Peter ; Jew, Thomas ; Niset, Martin
Author_Institution :
Embedded Memory Center, Motorola Inc., Austin, TX, USA
Abstract :
EEPROM emulation techniques are used with block-erasable Flash memories for embedded applications requiring nonvolatile storage of data that is updated in byte or word granularity. In this paper, we discuss the reliability of the emulated EEPROM using Flash memories. The reliability depends on many factors, including the emulation scheme, the EEPROM targets, and the Flash architecture used. Achieving reliability targets is a process of matching these factors with the endurance and data retention characteristics of the Flash technology. We present a model for combining parameters of emulation implementations with technology capability that can be used to predict reliability of the emulated EEPROM. This model enables selection of optimal layout of Flash blocks for emulation to meet a given EEPROM reliability target.
Keywords :
EPROM; flash memories; integrated circuit modelling; integrated circuit reliability; semiconductor device models; semiconductor device reliability; EEPROM emulation using flash memory; block-erasable Flash memories; embedded applications; implementation; nonvolatile storage; reliability model; word granularity; EPROM; Emulation; Flash memory; Helium; Microcontrollers; Nonvolatile memory; Power system reliability; Predictive models; Random access memory; Solid state circuits;
Conference_Titel :
Reliability Physics Symposium Proceedings, 2004. 42nd Annual. 2004 IEEE International
Print_ISBN :
0-7803-8315-X
DOI :
10.1109/RELPHY.2004.1315437