Improvement of carrier power to third-order intermodulation distortion power ratio in CMOS distributed amplifiers

Author

El-Khatib, Ziad ; MacEachern, Leonard ; Mahmoud, Samy A.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, ON, Canada

fYear

2008

fDate

14-17 Dec. 2008

Firstpage

98

Lastpage

101

Abstract

The design of a fully-integrated CMOS linearized distributed amplifier (DA) architectures with broadband linearization and a tunable linearity capability for ultra-wideband applications are presented. DA IIP3 linearity is improved by using feedforward, multi-tanh and cross-quad feedback distortion cancellation based CMOS DA gain cells. Simulations were performed in CMOS 0.18 Â¿m process technology and the results show that reducing the IMD₃ products of the linearized CMOS DA which improves the linearized DA C/IM₃ power ratio.

Keywords

CMOS analogue integrated circuits; distributed amplifiers; intermodulation distortion; linearisation techniques; ultra wideband communication; CMOS linearized distributed amplifier; broadband linearization; cross-quad feedback distortion cancellation; feedforward distortion; multitanh distortion; size 0.18 mum; third-order intermodulation distortion power ratio; tunable linearity; ultrawideband applications; CMOS technology; Circuits; Distributed amplifiers; Feedback; Frequency; Intermodulation distortion; Linearity; Linearization techniques; Nonlinear distortion; Ultra wideband technology; CMOS Distributed Amplifier; Carrier Power; Cross-Quad Feedback; Feedforward; Linearization Techniques; Multi-Tanh; Radio Over Fibre; Third-order Intermodulation Distortion Cancellation IMD3; Ultra-WideBand Communications;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2008. ICM 2008. International Conference on

Conference_Location

Sharjah

Print_ISBN

978-1-4244-2369-9

Electronic_ISBN

978-1-4244-2370-5

Type

conf

DOI

10.1109/ICM.2008.5393500

Filename

5393500